Micro and Nanofabrication at the University of Oxford
Mask aligner
Karl Suss MJB4 Mask Aligner
Photolithography is a process where light is used to change the solubility of a photoresist on your sample. This instrument is used for the alignment of spin-coated substrates to patterned masks. The exposure is performed by means of a collimated UV source. The tooling (chucks and mask holders) can be easily changed to adapt various wafer and mask sizes as well as soft, hard, and vacuum contact modes.
Specifications:
Can handle round or square samples of 3 mm up to 100 mm, with thicknesses of up to 4 mm (1 mm in vacuum contact mode)
Supports mask diameters from 1 to 5 inches, with thicknesses of up to 4.8 mm
The maximum stack thickness (mask + substrate) that can be detected by the calibration system is 7 mm
500 W Hg lamp
Exposure spectrum covers 350-450 nm. Intensity is >20 mW/cm2 @ 350-380 nm and >60 mW/cm2 @350-450 nm. Exposure area is 100 mm in diameter (uniformity ±2.5%).
All movements are performed with manual micropositioners, with travel ranges of X ≧ ± 5 mm, Y ≧ ± 5 mm, and Rotation ≧ ± 5°. Top-side alignment is done using a microscope with 5x, 10x, and 20x objectives.
Illumination is in the visible spectrum
Photolithography process shown for both positive and negative resist