Reactive-ion etching

Oxford Instruments PlasmaPro 80 Cobra ICP-RIE

Reactive-ion etching (RIE) is a common etching technology used in microfabrication. RIE is a type of dry etching that has different characteristics than wet etching; RIE uses chemically reactive plasma to remove material from wafers. The plasma is generated under low pressure by an electromagnetic field and high-energy ions from the plasma attack the wafer surface and react with it. The Oxford Instruments PlasmaPro 80 Cobra ICP-RIE is an easy-to-use tool with an open-lid design for quick prototyping. It can handle up to 200 mm diameter wafers with excellent etching control and wafer uniformity. Following are the salient features of our RIE:

Specifications

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  • Available gases for etching: SF6, C4F8, O2, Ar, CF4, CHF3
  • Etching recipes available for Si, SiN, SiO2
  • Maximum power of 200 W for RIE and 1000 W for ICP
  • Helium Backing
  • Electrode Temperature Control  
  • Up to 200 mm diameter wafers